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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35391

    Title: Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs
    Authors: Hsu,YP;Chang,SJ;Su,YK;Sheu,JK;Lee,CT;Wen,TC;Wu,LW;Kuo,CH;Chang,CS;Shei,SC
    Contributors: 光電科學與工程學系
    Date: 2004
    Issue Date: 2010-07-07 14:13:04 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on
    Appears in Collections:[光電科學與工程學系] 期刊論文

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