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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35401

    Title: Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer
    Authors: Lee,ML;Sheu,JK;Su,YK;Chang,SJ;Lai,WC;Chi,GC
    Contributors: 光電科學與工程學系
    Keywords: CONTACTS;GAAS
    Date: 2004
    Issue Date: 2010-07-07 14:13:26 (UTC+8)
    Publisher: 中央大學
    Abstract: AlGaN-GaN-based UV Schottky-barrier photodetectors with (i.e., sample A) and without (i.e., sample B) the low-temperature (LT) GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. Under reverse bias
    Appears in Collections:[光電科學與工程學系] 期刊論文

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