InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35728

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35728

Title:	InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
Authors:	Wen,TC;Chang,SJ;Su,YK;Wu,LW;Kuo,CH;Lai,WC;Sheu,JK;Tsai,TY
Contributors:	光電科學研究中心
Keywords:	BARRIER GROWTH TEMPERATURE;GAN;BLUE;SI;LAYER
Date:	2003
Issue Date:	2010-07-07 15:50:09 (UTC+8)
Publisher:	中央大學
Abstract:	High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from we
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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