Minipressure sensor using AlGaN/GaN high electron mobility transistors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38958

Title:	Minipressure sensor using AlGaN/GaN high electron mobility transistors
Authors:	Hung,SC;Chou,BH;Chang,CY;Lo,CF;Chen,KH;Wang,YL;Pearton,SJ;Dabiran,A;Chow,PP;Chi,GC;Ren,F
Contributors:	物理研究所
Keywords:	DEVICE;HEMTS;FILM
Date:	2009
Issue Date:	2010-07-08 14:00:23 (UTC+8)
Publisher:	中央大學
Abstract:	AlGaN/GaN high electron mobility transistors (HEMTs) with a polarized polyvinylidene difluoride (PVDF) film coated on the gate area exhibited significant changes in channel conductance upon exposure to different ambient pressures. The PVDF thin film was deposited on the gate region with an ink-jet plotter. Next, the PDVF film was polarized with an electrode located 2 mm above the PVDF film at a bias voltage of 10 kV and 70 degrees C. Variations in ambient pressure induced changes in the charge in the polarized PVDF, leading to a change in surface charges on the gate region of the HEMT. Changes in the gate charge were amplified through the modulation of the drain current in the HEMT. By reversing the polarity of the polarized PVDF film, the drain current dependence on the pressure could be reversed. Our results indicate that HEMTs have potential for use as pressure sensors.
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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