Minipressure sensor using AlGaN/GaN high electron mobility transistors

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/38958

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/38958

題名:	Minipressure sensor using AlGaN/GaN high electron mobility transistors
作者:	Hung,SC;Chou,BH;Chang,CY;Lo,CF;Chen,KH;Wang,YL;Pearton,SJ;Dabiran,A;Chow,PP;Chi,GC;Ren,F
貢獻者:	物理研究所
關鍵詞:	DEVICE;HEMTS;FILM
日期:	2009
上傳時間:	2010-07-08 14:00:23 (UTC+8)
出版者:	中央大學
摘要:	AlGaN/GaN high electron mobility transistors (HEMTs) with a polarized polyvinylidene difluoride (PVDF) film coated on the gate area exhibited significant changes in channel conductance upon exposure to different ambient pressures. The PVDF thin film was deposited on the gate region with an ink-jet plotter. Next, the PDVF film was polarized with an electrode located 2 mm above the PVDF film at a bias voltage of 10 kV and 70 degrees C. Variations in ambient pressure induced changes in the charge in the polarized PVDF, leading to a change in surface charges on the gate region of the HEMT. Changes in the gate charge were amplified through the modulation of the drain current in the HEMT. By reversing the polarity of the polarized PVDF film, the drain current dependence on the pressure could be reversed. Our results indicate that HEMTs have potential for use as pressure sensors.
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[物理研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	1113	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing