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日期	題名	作者
2005	Device performance improvement of InGaP/InGaAs doped-channel FETs	Chien,FT; Yin,JM; Chiu,HC; Chan,YJ
2005	Device-partition method using equivalent circuit model in two-dimensional device simulation	Chang,CC; Li,SJ; Tsai,YT
2005	Effect of Cl-2/Ar dry etching on p-GaN with Ni/Au metallization characterization	Hsueh,KP; Hsu,HT; Wang,CM; Huang,SC; Hsin,YM; Sheu,JK
2005	Effect of interlevel Coulomb interactions on the tunneling current through a single quantum dot	Kuo,DMT
2005	Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection	Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
2005	Electrically-driven spontaneous emission spectrum of a single quantum dot	Kuo,DMT; Chang,YC
2005	Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition	Chang,WH; Chen,HY; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT
2005	Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature	Chen,WY; Chang,WH; Chang,HS; Hsu,TM; Lee,CC; Chen,CC; Luan,PG; Chang,JY; Hsieh,TP; Chyi,JI
2005	Fast decomposition of filterbanks for the state-of-the-art audio coding	Huang,SW; Tsai,TH; Chen,LG
2005	Feature-based error concealment for object-based video	Lee,PJ; Chen,HH; Wang,WJ; Chen,LG

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