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顯示項目776-800 / 951. (共39頁) << < 27 28 29 30 31 32 33 34 35 36 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
1996	DC and microwave characteristics of In-0.3(AlxGa1-x)(0.7)As/In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs	Hwang,HP; Shieh,JL; Pan,JW; Chou,CC; Chyi,JI
1996	Delay bound analysis for multiplexed traffic controlled by enhanced leaky bucket	Wu,JS; Kuo,FJ; Sue,SW
1996	Design of multi-connection shaper and enforcer for usage parameter control in ATM networks	Kuo,FJ; Wu,JS
1996	Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures	Yang,MT; Chan,YJ
1996	Effects of dual leaky bucket parameters on cell loss ratio: Worst case analysis	Wu,JS; Sue,SW
1996	Effects of fading and partial-band noise jamming on a fast FH/BFSK acquisition receiver with noise-normalization combination	Chung,CD; Huang,PC
1996	Effects of finger width on large-area InGaAs MSM photodetectors	Yuang,RH; Chyi,JI
1996	Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers	Chyi,JI; Gau,JH; Wang,SK; Shieh,JL; Pan,JW
1996	Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates	Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI
1996	Estimation of asymptotic stability region and sliding domain of uncertain variable structure systems with bounded controllers	Shyu,KK; Chen,SR
1996	GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors	Chan,YJ; Wu,CS; Chyi,JI; Shieh,JL
1996	High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)	Laih,LH; Chen,YA; Tsay,WC; Hong,JW
1996	High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts	Yuang,RH; Chyi,JI; Chan,YJ; Lin,W; Tu,YK
1996	High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes	Yuang,RH; Chien,YJ; Shieh,JL; Chyi,JI
1996	High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield	Yuang,RH; Chyi,JI; Lin,W; Tu,YK
1996	Improving access delay fairness of DQDB MANs under overload condition	Wu,JS; Hsieh,YT
1996	In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterostructure and its application on HEMTs	Wu,CS; Chan,YJ; Chen,CH; Shieh,JL; Chyi,JL
1996	Invariant handwritten Chinese character recognition using fuzzy ring data	Tseng,DC; Chiu,HP; Cheng,JC
1996	Mandarin speech recognition using segment-based cepstral comparison in noisy conditions	Tung,SL; Juang,YT
1996	Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates	Chyi,JI; Shieh,JL; Pan,JW; Lin,RM
1996	Monolithic microwave AlGaAs/InGaAs doped-channel FET switches	Ke,LW; Chan,YJ; Chiang,YC
1996	New methods to design an integral variable structure controller	Wang,JD; Lee,TL; Juang,YT
1996	Parallel event-driven MOS timing simulator on distributed memory multiprocessors	Hsieh,WH; Jou,SJ; Su,CC
1996	Performance analysis of voice data integrated CDMA system with QoS constraints	Wu,JS; Lin,JR
1996	Pole assignment of a family of matrices in a specified region	Chung,HY; Shyu,CY

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