我們已證明了具有鋅擴散之850奈米波段面射型雷射有很好的特性。在主動層上運用了具有應力InAlGaAs之多層量子井結構，而在同樣850奈米波段中與具有應力InGaAs多層量子井相較下，我們有較厚的主動層與較好的晶圓均勻性。我們的元件利用兩種不同擴散深度與相同水氧化孔徑(約6μm)，來分別優選靜態、動態與功率特性。擴散較深的元件具有較好的靜態特性。它具有很低的臨限電流(0.8mA)，高的微分量子效率(90%)，而且有著最大功率9.7mW並在所有偏流範圍內仍維持著近單一之中心波長模態輸出。另外具有較淺的鋅擴散元件(~0.6μm)，有著很好的動態特性，而且他顯示出有很大的調變電流效率(9.5GHz/mA1/2 ), 很高的資料量(32 Gbit/s error-free)，和一個很大資料量對應功率消耗之斜率(5.25Gbps/mW)，並有著非常低的峰對峰驅動電壓(Vp-p=0.25V)。這些靜態與動態之量測結果顯示出具有應力之InAlGaAs多層量子井與鋅擴散技術有著非常好的表現。We demonstrate a high-performance Zn-diffusion 850nm vertical-cavity surface-emitting laser (VCSEL). By use of the strained InAlGaAs multiple quantum wells (MQWs) as active region, our structure can have a much thicker well width and better wafer uniformity than those of strained InGaAs MQWs at the same 850nm wavelength. Two different Zn-diffusion depths were adopted in our devices with the same oxide current-confined aperture (~6μm) to optimize the static and dynamic power performance, respectively. The device with a deep Zn-diffusion depth (~1.2μm) is for the optimized static performance. It shows a low threshold current (0.8mA), a high differential quantum efficiency (90%), and can sustain the single fundamental-mode output with a maximum output power of 9.7mW under the full range of bias currents. On the other hand, device with a shallow Zn-diffusion depth (~0.6μm) is used for good dynamic performance and it exhibits a high modulation current efficiency (9.5 GHz/mA1/2), very high-data rate(32Gbit/sec error-free)performance,and very-high data-rate/power-dissipation ratio (5.25 Gbps/mW) with an extremely small peak-to-peak driving voltage (Vpp: 0.25V). These dynamic and static measurement results clearly indicate that the advantages of using InAlGaAs strained MQWs and Zn-diffusion techniques for 850nm VCSELs.
