三閘極金氧半場效電晶體之轉角效應探討; Corner Effect in Triple-Gate MOSFET

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/48439

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/48439

Title:	三閘極金氧半場效電晶體之轉角效應探討;Corner Effect in Triple-Gate MOSFET
Authors:	蘇柏寬;Bo-kuan Su
Contributors:	電機工程研究所
Keywords:	轉角效應;三閘極;元件模擬;臨限電壓;Threshold voltage;simulation;Corner Effect;Triple-gate
Date:	2011-07-06
Issue Date:	2012-01-05 14:54:51 (UTC+8)
Abstract:	本篇論文中，我們藉由二維元件模擬器探討三閘極金氧半場效電晶的元件特性，並探討因元件結構所產生的轉角效應，由於元件的電流大小與元件的通道寬度成正比，我們在元件通道的側壁上加上另外兩面閘極，以達到不降低電路密度而增加元件通道的有效寬度，提高元件的電流驅動力。從模擬結果中，三閘極結構比單閘極結構有著更好的電流驅動力。最後，我們將元件結構顯示器與載子濃度顯示器整合於二維元件模擬器當中，讓使用者可以更快速檢驗元件結構的正確性與快速觀察元件整體的載子分部情形。 In this thesis, we design a 2-D device simulator to simulate the triple-gate MOSFET device characteristic. Then discuss the corner effect of triple-gate structure. The triple-gate MOSFET has three surfaces of gate structures which can increase the effective channel width of the device to enhance the current drivability of the device without reducing the packing density of the circuit. According to the simulation results of the 2-D device, the saturation drain current of the triple-gate MOSFET are much better than the single-gate MOSFET. Finally, in order to quickly verify the device structure and simulation results, we design a 2-D structure and concentration indicator. The structure and concentration indicator can be used to quickly check the 2-D simulation results of the device structures and concentration result.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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