English  |  正體中文  |  简体中文  |  Items with full text/Total items : 75369/75369 (100%)
Visitors : 25439538      Online Users : 144
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49883

    Title: Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
    Authors: Lin,YH;Liu,YS;Liu,CY
    Contributors: 化學工程與材料工程學系
    Date: 2010
    Issue Date: 2012-03-27 16:25:25 (UTC+8)
    Publisher: 國立中央大學
    Abstract: With Ti doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 degrees C in vacuum, the transmittance of Ti-doped ITO (Ti : ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti : ITO thin film is equivalent with that of ITO thin film (4.248 x 10(-4) Omega . cm). Using Ti : ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer.
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明