English  |  正體中文  |  简体中文  |  Items with full text/Total items : 75369/75369 (100%)
Visitors : 25451596      Online Users : 251
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49921

    Title: Abnormal Cu(3)Sn Growth and Kirkendall Formation Between Sn and (111) and (220) Preferred-Orientation Cu Substrates
    Authors: Huang,TS;Tseng,HW;Hsiao,YH;Cheng,CH;Lu,CT;Liu,CY
    Contributors: 化學工程與材料工程學系
    Date: 2011
    Issue Date: 2012-03-27 16:26:31 (UTC+8)
    Publisher: 國立中央大學
    Abstract: (111) and (220) preferred-orientation Cu substrates were successfully produced by varying electroplating current-density. While these preferred-orientation Cu substrates reacted with Sn, serious Kirkendall voids formed at the interfaces between Sn and (111) and (220) preferred-orientation Cu substrates. Also, abnormal Cu(3)Sn growth occurs; the Cu(3)Sn layer decreased upon aging and vanished after 1000-h aging. With a prolonged 2000-h aging, a Cu(3)Sn layer re-grew at the Cu(6)Sn(5)/Cu interface. The abnormal Cu(3)Sn growth was found to highly associate with serious Kirkendall formation (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3608248] All rights reserved.
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明