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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49999

    Title: Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers
    Authors: Lee,SW;Huang,SH;Cheng,SL;Chen,PS;Wu,WW
    Contributors: 材料科學與工程研究所
    Date: 2010
    Issue Date: 2012-03-27 16:28:33 (UTC+8)
    Publisher: 國立中央大學
    Abstract: The formation of Ni silicides on Si(1 - y)C(y) (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si(0.982)C(0.018) samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si(1 - y)C(y) epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si(1y)C(y) for device applications. (C) 2010 Elsevier B.V. All rights reserved.
    Relation: THIN SOLID FILMS
    Appears in Collections:[材料科學與工程研究所 ] 期刊論文

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