Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers

NCU Institutional Repository > 工學院 > 材料科學與工程研究所 > 期刊論文 > Item 987654321/49999

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/49999

题名:	Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers
作者:	Lee,SW;Huang,SH;Cheng,SL;Chen,PS;Wu,WW
贡献者:	材料科學與工程研究所
关键词:	THERMAL-STABILITY;SI
日期:	2010
上传时间:	2012-03-27 16:28:33 (UTC+8)
出版者:	國立中央大學
摘要:	The formation of Ni silicides on Si(1 - y)C(y) (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si(0.982)C(0.018) samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si(1 - y)C(y) epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si(1y)C(y) for device applications. (C) 2010 Elsevier B.V. All rights reserved.
關聯:	THIN SOLID FILMS
显示于类别:	[材料科學與工程研究所 ] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	588	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing