Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers

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題名:	Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers
作者:	Lee,SW;Huang,SH;Cheng,SL;Chen,PS;Wu,WW
貢獻者:	材料科學與工程研究所
關鍵詞:	THERMAL-STABILITY;SI
日期:	2010
上傳時間:	2012-03-27 16:28:33 (UTC+8)
出版者:	國立中央大學
摘要:	The formation of Ni silicides on Si(1 - y)C(y) (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si(0.982)C(0.018) samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si(1 - y)C(y) epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si(1y)C(y) for device applications. (C) 2010 Elsevier B.V. All rights reserved.
關聯:	THIN SOLID FILMS
顯示於類別:	[材料科學與工程研究所 ] 期刊論文

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