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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51908

    Title: An alternative passivation approach for AlGaN/GaN HEMTs
    Authors: Lin,HK;Yu,HL;Huang,FH
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:10:08 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This work proposes a two-step passivation approach for AlGaN/GaN high-electron-mobility transistors (HEMTs) and demonstrates improved dc, high-frequency and microwave power performance. These improvements depend primarily on the pretreatment of the AlGaN surface provided by the selective dry etching of n(+)-GaN cap layers and the subsequent RTA annealing of ohmic contacts, both of which steps are performed immediately before the first-step passivants are deposited. No additional process step is adopted to prepare the surface for passivation. PECVD-deposited SiN(x) and e-beam-evaporated SiO(x) are selected as the passivants in this work and both effectively suppress trapping effect when used in the two-step passivation approach. (C) 2010 Elsevier Ltd. All rights reserved.
    Appears in Collections:[電機工程學系] 期刊論文

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