Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/52058

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/52058

题名:	Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
作者:	Hsu,WT;Liao,YA;Hsu,FC;Chiu,PC;Chyi,JI;Chang,WH
贡献者:	電機工程學系
关键词:	MU-M;CHEMICAL TRENDS;SEMICONDUCTORS;EMISSION
日期:	2011
上传时间:	2012-03-28 10:14:23 (UTC+8)
出版者:	國立中央大學
摘要:	The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624464]
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[電機工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	501	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing