Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

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題名:	Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
作者:	Hsu,WT;Liao,YA;Hsu,FC;Chiu,PC;Chyi,JI;Chang,WH
貢獻者:	電機工程學系
關鍵詞:	MU-M;CHEMICAL TRENDS;SEMICONDUCTORS;EMISSION
日期:	2011
上傳時間:	2012-03-28 10:14:23 (UTC+8)
出版者:	國立中央大學
摘要:	The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624464]
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[電機工程學系] 期刊論文

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