Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/52059

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52059

Title:	Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer
Authors:	Liu,HH;Chen,PR;Lee,GY;Chyi,JI
Contributors:	電機工程學系
Keywords:	LIGHT-EMITTING-DIODES;WURTZITE ALN;GAN;SEMICONDUCTORS;PARAMETERS;INN
Date:	2011
Issue Date:	2012-03-28 10:14:25 (UTC+8)
Publisher:	國立中央大學
Abstract:	This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al(0.1)Ga(0.9)N/GaN/In(0.06)Ga(0.94)N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al(0.1)Ga(0.9)N/GaN/In(0.06)Ga(0.94)N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	363	View/Open

社群 sharing