Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

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题名:	Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer
作者:	Liu,HH;Chen,PR;Lee,GY;Chyi,JI
贡献者:	電機工程學系
关键词:	LIGHT-EMITTING-DIODES;WURTZITE ALN;GAN;SEMICONDUCTORS;PARAMETERS;INN
日期:	2011
上传时间:	2012-03-28 10:14:25 (UTC+8)
出版者:	國立中央大學
摘要:	This letter reports an InGaN light-emitting diode (LED) structure that has an n-type Al(0.1)Ga(0.9)N/GaN/In(0.06)Ga(0.94)N current spreading layer under its multiple-quantum-well active region. As indicated by simulation, the Al(0.1)Ga(0.9)N/GaN/In(0.06)Ga(0.94)N heterostructure induces a higher electron concentration than an n-AlGaN/GaN cladding layer and an n-GaN/InGaN current spreading layer that are used in conventional LEDs. As a result, the proposed n-type spreading layer is expected to alleviate current crowding and improve external quantum efficiency. Experimentally, the light output uniformity across the chips is greatly improved. The output power and wall-plug efficiency are enhanced by about 18.2% and 22.2% at an injection current of 350 mA for the LEDs employing the new double-heterostructure current spreading layer.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程學系] 期刊論文

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