Effect of impurities on thermal stability of pseudomorphically strained Si:C layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52891

Title:	Effect of impurities on thermal stability of pseudomorphically strained Si:C layer
Authors:	Chuang,YT;Wang,SH;Woon,WY
Contributors:	物理學系
Keywords:	SUBSTITUTIONAL CARBON INCORPORATION;SI1-YCY/SI HETEROSTRUCTURES;SILICON;PRECIPITATION;IMPLANTATION;TEMPERATURE;RELAXATION;EPITAXY;SI(001);ALLOYS
Date:	2011
Issue Date:	2012-06-11 10:48:39 (UTC+8)
Publisher:	國立中央大學
Abstract:	We investigate the thermal stability of pseudomorphically strained Si: C layer using high resolution x-ray diffraction (HRXRD) and Fourier transform infrared (FTIR) spectroscopy. Far below beta-SiC precipitation threshold, almost complete strain relaxation is found without significant substitutional carbon (C(sub)) loss. FTIR shows the strain relaxation is related to volume compensation by C(sub)-interstitial complex formation through oxidation injection of interstitial. By multilayer HRXRD kinematical simulation, we find correlation of the enhanced strain relaxation to P distribution, implying P's role as additional interstitial promoter during postannealing treatment. We relate our findings to recent reports on strain relaxation issues in Si:C devices fabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3572339]
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Physics] journal & Dissertation

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