Effect of impurities on thermal stability of pseudomorphically strained Si:C layer

NCU Institutional Repository > 理學院 > 物理學系 > 期刊論文 > Item 987654321/52891

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/52891

題名:	Effect of impurities on thermal stability of pseudomorphically strained Si:C layer
作者:	Chuang,YT;Wang,SH;Woon,WY
貢獻者:	物理學系
關鍵詞:	SUBSTITUTIONAL CARBON INCORPORATION;SI1-YCY/SI HETEROSTRUCTURES;SILICON;PRECIPITATION;IMPLANTATION;TEMPERATURE;RELAXATION;EPITAXY;SI(001);ALLOYS
日期:	2011
上傳時間:	2012-06-11 10:48:39 (UTC+8)
出版者:	國立中央大學
摘要:	We investigate the thermal stability of pseudomorphically strained Si: C layer using high resolution x-ray diffraction (HRXRD) and Fourier transform infrared (FTIR) spectroscopy. Far below beta-SiC precipitation threshold, almost complete strain relaxation is found without significant substitutional carbon (C(sub)) loss. FTIR shows the strain relaxation is related to volume compensation by C(sub)-interstitial complex formation through oxidation injection of interstitial. By multilayer HRXRD kinematical simulation, we find correlation of the enhanced strain relaxation to P distribution, implying P's role as additional interstitial promoter during postannealing treatment. We relate our findings to recent reports on strain relaxation issues in Si:C devices fabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3572339]
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[物理學系] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	300	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing