在近代的研究中，有文獻提到以化學水浴法沉積CdS薄膜在CIGS上會有鎘離子擴散進CIGS薄膜的現象，更有文獻證實了這種現象會使CIGS表面的特性由p-type轉換成n-type (n-CIGS:Cd)，因此會在CIGS薄膜表面的內部形成pn-junction，而這樣的好處是空乏區內的缺陷少，以及增加CIGS薄膜內部更深位置的電子電洞對收集量。所以有很多研究為了增加n-CIGS:Cd的厚度，於是先將CIGS薄膜浸泡在含鎘離子的溶液中，使鎘離子自然的擴散到CIGS薄膜表面，然後再沉積CdS薄膜，不過沒有文獻明確的指出如何判別鎘離子對CIGS薄膜的擴散程度為何時，對CIGS薄膜為最好的有效參雜結果。本實驗利用XPS與PL的量測，分析出在不同的鎘離子擴散參數下，為達到最好的有效參雜所需後退火200℃的時間。除此之外，我們在量測分析的結果中發現到實驗中硫離子對CIGS薄膜的擴散也會造成好的影響，並且分析出對CIGS薄膜有最好的影響的硫離子擴散程度。In the recent research, there were documents mentioned that the cadmium ion will diffuse on the surface of the CIGS thin film by depositing the CdS thin film on the CIGS thin film with chemical bath deposition (CBD). The other documents confirmed the properties of the CIGS on surface were transferred from p-type to n-type (n-CIGS:Cd). This would form the pn-junction inside the CIGS thin film, and there were benefits on fewer defects in depletion region and more Electron-hole pairs collected in the deeper position inside of the CIGS thin film. There were many research used prior the ion-soaking solution to diffuse cadmium ion into the CIGS thin film to deposit CdS thin film on CIGS thin film for increasing the thickness of n-CIGS:Cd, but no one could indicate clearly what the degree of the cadmium ion diffused into the CIGS thin film would have the best effectively doping for the CIGS thin film.In this experiment, we found the method to distinguish how long did the different parameter of the cadmium diffused into the CIGS thin film post-annealing at 200℃ need to be the best effectively doping for the CIGS thin film by the analysis of the X-ray Photoelectron Spectrometer (XPS) and the Photoluminescence spectrum (PL). In addition, we found the sulfur ion diffused into the CIGS thin film would affect the CIGS thin film better, and what the degree of the sulfur ion diffused into the CIGS thin film would have the best affect to the CIGS thin film.
