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    題名: 大尺寸金屬有機化學氣相沉積反應腔之數值分析模擬研究;The simulation analysis of a large-size MOCVD reactor
    作者: 胡智愷;ZHI-KAI,HU
    貢獻者: 能源工程研究所
    關鍵詞: 金屬有機化學氣相沉積;加熱器;熱流場;反應腔體;發光二極體
    日期: 2012-11-27
    上傳時間: 2012-12-25 13:37:02 (UTC+8)
    出版者: 國立中央大學
    摘要: MOCVD為製造發光二極體(LED)的關鍵設備,MOCVD系統的組件大致可分為:反應腔、氣體控制系統、反應源及廢氣處理系統等。 反應腔體為MOCVD過程中發生化學反應的地方,腔體與氣體供應系統連接,並藉由噴嘴(nozzle)或噴氣頭(showerhead)將氣體混合;腔體材質通常採用不鏽鋼製作,腔體的內壁則由石英或是高溫陶瓷構成內襯,而腔體中的乘盤置於加熱器之上。MOCVD反應腔的設計對薄膜厚度均勻性和品質而言非常關鍵,本文以CFD計算流體力學軟體Fluent針對大尺寸近耦合MOCVD反應腔體設計做一研究探討,並以載台與進氣口間隙、腔體壁面溫度、進氣口溫度、載台旋轉速度、壓力變化等作為研究參數。初步探討大尺寸下MOCVD腔體內部熱流場之行為。本研究結果也將提供設計大尺寸近耦合MOCVD反應腔體的基本架構.MOCVD is a key process for Light Emitting Diode industry, and the main components in a MOCVD system include reaction chamber, gas control system, MO source system and scrubber.Basically, the reaction chamber connected with the gas supply system is a place where chemical reaction happened for MOCVD process. It makes MO source and carrier gas into a mixed gas by using the gas inlet system nozzle or showerhead. Generally, the material of the reactor is stainless steel, and the chamber wall is usually made by quartz or ceramics, and the susceptor is placed upper to the heater.Design of a MOCVD reactor is very critical for epitaxy thin film uniformity and also the quality. A numerical Analysis for a large size closed-spaced MOCVD reactor will be developed by introducing the existing software Computational Fluid Dynamics FLUENT in this research. The numerical parameters will involve space between gas inlet and susceptor, wall temperature, gas inlet temperature, susceptor rotation rate, chamber pressure and so on. In the paper, we primarily investigate the behavior for thermal flow field of a large size close-spaced MOCVD reactor. Additionally, the results of this study can be used as a basic frame work for designing a large size close-spaced MOCVD reactor.
    顯示於類別:[能源工程研究所 ] 博碩士論文

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