矽 (Si) 是半導體工業的重要材料，被廣泛作為矽晶片，但是目前面臨的挑戰之一是矽晶圓邊緣的均勻性較差，為了改善矽晶圓表面上的矽厚度均勻性，本研究在反應器中添加了一種噴嘴，此噴嘴稱為 x-flow。計算結果顯示，矽表面的長晶速率分布取決於x-flow流線和晶圓之間的距離及x-flow流線的範圍。除此之外，可通過x-flow改變矽晶圓表面上的三氯矽烷濃度梯度，影響矽片上矽的生長速率。因此，本研究對不同高度和不同角度以及不同成分的 x-flow進行研究，當x-flow在最大高度時流線低於主流，晶圓上三氯矽烷的局部濃度梯度變大，使晶圓上的生長速率更高。而在不同角度中，角度越大，x-flow影響的區域與晶圓邊緣的距離越大，晶圓邊緣的生長速率變化越變小。隨x-flow的成分不同，增加x-flow的三氯矽烷，使三氯矽烷的局部濃度梯度更大，晶圓邊緣的生長速率更大。;Silicon (Si) is known as an important material for the semiconductor industry. They are generally widely used as silicon (Si) wafers. However, one of the primary challenges is the poor uniformity of the Si-wafer edge. In this study, an injector called x-flow was added to the reactor to make the Si thickness uniformity on the Si wafer better. The computational results show that the variation of the growth rate of Si on the wafer is strongly dependent on the distance between the streamlines of x-flow and the wafer and how far the streamlines of x-flow can go. Besides, the x-flow affects the growth rate of Si on the wafer by changing the local concentration gradient of Trichlorosilane (TCS) on the wafer. Therefore, this research conducts a detail study on x-flow of different heights, different angles, and different compositions. At a maximum height of x-flow, the streamlines of main flow go below the x-flow, which increases the local concentration gradient of TCS on the wafer and makes the growth rate on the wafer higher. The bigger angle has a long distance between the affected region by x-flow and the edge of the wafer, so the bigger angle makes the change in growth rate on the edge of the wafer less. The x-flow has more TCS, which makes the local concentration gradient of TCS larger and makes the growth rate near the edge of the wafer larger.
