中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/88466
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 78937/78937 (100%)
Visitors : 39151578      Online Users : 684
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/88466


    Title: Characterizing films synthesis of high-k hydrogenated graphene in low-temperature capacitively-coupled acetylene plasma chemical vapor deposition system
    Authors: 林宣瑋;Lin, Syuan-Wei
    Contributors: 物理學系
    Keywords: 高介電常數;石墨烯;氫化石墨烯;鐵電材料;電漿輔助化學氣相沉積;電容耦合式電漿;High-k material;Graphene;Hydrogenated graphene;Ferroelectric material;Plasm enhanced vapor deposition system;Capacitively couple plasma
    Date: 2022-06-16
    Issue Date: 2022-07-14 10:38:59 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 有鑑於現今半導體工業金屬氧化閘極的微縮製程,傳統使用的介電材料如二
    氧化矽,因為其介電常數所造成的漏電問題,取而代之的高介電常數材料的開發變得極為重要。相較於無機物的高介電常數材料,有機材料的低成本、製程多元以及物化性質豐富的特性吸引了眾多學者紛紛投入此研究領域。在西元 2022 年,Kim 等人已成功合成非晶向氫化石墨稀並測試其介電性質成為一有潛力的高介電常數有機材料。借鑑其研究,本實驗室以氫化石墨稀出發,參考理論模擬結果,希望透過電容耦合式化學輔助電漿汽相沉積系統,於乙炔低溫電漿中製造出氫化石墨稀,並透過電漿瓦數改變其晶格構造及薄膜組成,深入研究氫化石墨稀的形成過程以及其介電特性。透過光致發光光譜、拉曼光譜、傅立葉紅外轉換光譜以及金屬-絕緣體-金屬(MIM)之電容量測,本研究成功在低溫乙炔電漿中製造高介電常數(K=32.3)的氫化石墨稀薄膜,更在其電性上觀察到已被理論模擬證實之鐵電材料的性質。
    ;In this decade, high-k material has been widely developed because of its necessary toward narrowing transistor gate length. Unlike traditional silicon dioxide, organic material has drawn lots of attentions due to its low-cost and unique physiochemical properties. In these two years, hydrogenated amorphous graphene has been successfully fabricated as a high-k dielectric material while graphene is a well-known semimetal. Furthermore, there are lots of researches
    showed hydrogenated graphene has special properties like bandgap tuning or ferromagnetism. In this report, we want to follow hydrogenated amorphous graphene step to find if hydrogenated graphene can be fabricated as a high-k dielectric material by Raman, Metal-Insulator-Metal (MIM) C-V measurement and FTIR analysis
    Appears in Collections:[Graduate Institute of Physics] Electronic Thesis & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML100View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明