本研究是以塗佈擴散的方式進行多晶矽與氧化層堆疊結構後退火處理，此方法相較於傳統退火製程中通入有毒且易自燃的氣體(POCl3及BBr3)更為安全且廉價。結構中的多晶矽是以磁控濺鍍的方式製備，剛沉積之矽薄膜為本質且非晶的結構，接著使用後退火摻雜磷的方式使本質非晶矽轉為n型多晶矽。在退火的製程上針對退火溫度、退火時間、磷供給溶液量去探討，分析退火後的薄膜表面形貌、結構、電性及鈍化能力，以求得最低的複合電流(J0)為目標找尋最佳退火條件。由結果得知，以9.86 W/cm2的電漿瓦數密度沉積之50 nm的多晶矽，在退火後有最好的複合電流306 fA/cm2、片電阻20 Ω/□及接觸電阻7.46 mΩ cm2。 這種後退火擴散的方式可以在很短的時間提供大量的摻雜載子，藉由在退火參數上的調整產生多晶矽的能帶彎曲效應及場效應鈍化來降低電子電洞複合，是一個可運用於TOPCon結構電池之有潛力的退火方式。 ;Among common methods to anneal silicon films, the method of spin-on-doped is the safest one as it does not require any toxic gaseous and is cheaper compared to traditional furnace annealing. In this study, we use magnetron sputtering to deposit polysilicon. The as-deposited silicon films are intrinsic and amorphous structures, and will be converted into n-type polysilicon by the phosphorus diffusion with post-annealing. The annealing temperature, annealing time, and the amount of dopant solution are investigated in the process, and the surface morphologies, structures, electrical properties, and the passivated ability of the annealed films are analyzed. The optimization of the annealing conditions depends on the lowest recombination current (J0). According to the results, passivation contacts at the plasma power density of 9.86 W/cm2 and poly-Si thickness of 50 nm achieve the lowest recombination current of 306 fA/cm2 and sheet resistance of 20 Ω/□, whereas their contact resistivity is still low at 7.46 mΩ cm2. This method can provide a large number of doping carriers in a very short time. The band bending effect and the field passivation of polysilicon are produced by optimal post-annealing treatment to reduce electron-hole recombination. This is a potential way to anneal polysilicon of TOPCon solar cells.
