隨著半導體技術的進步，對製程中所使用的化學品和有機溶劑中的金屬離子濃度的要求也日益增加，在業界大部分都是使用感應耦合電漿質譜儀(ICP-MS)來進行定性和定量分析。然而ICP-MS的檢測極限已無法滿足現今電子級化學品中超低金屬離子濃度的要求，且ICP-MS的高量測成本以及漫長的量測時間大幅增加了晶片的生產成本，因此，尋找ICP-MS的替代方案對於半導體製造商來說變得至關重要。本研究目的在於採用矽奈米線場效電晶體(SiNW-FET)作為檢測元件，開發了一種具有成本效益且快速檢測半導體晶片製程中使用的化學品中超低金屬離子濃度的方法。;As semiconductor technology advances, the stringent requirements for the concentration of metal ions in the chemicals and organic solvents used in the manufacturing process have increased. The industry predominantly relies on Inductively Coupled Plasma Mass Spectrometry (ICP-MS) for qualitative and quantitative analysis. However, the detection limits of ICP-MS can no longer meet the ultra-low metal ion concentration requirements in modern electronic-grade chemicals. Additionally, the high measurement costs and lengthy measurement times of ICP-MS significantly increase the production costs of chips. Therefore, finding an alternative to ICP-MS has become crucial for semiconductor manufacturers. This study aims to develop a cost-effective and rapid method for detecting ultra-low metal ion concentrations in the chemicals used in semiconductor wafer processing by employing Silicon Nanowire Field-Effect Transistors (SiNW-FET) as the detection element.
