高品質鉛鈣鈦礦膜的製備及其光電性能之研究

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題名:	高品質鉛鈣鈦礦膜的製備及其光電性能之研究
作者:	蔡宗佑;Tsai, Tsung-Yu
貢獻者:	化學學系
關鍵詞:	鈣鈦礦;添加劑;Pervoskite
日期:	2024-08-21
上傳時間:	2024-10-09 15:28:26 (UTC+8)
出版者:	國立中央大學
摘要:	鉛鈣鈦礦太陽能電池(PSCs)，元件中的鈣鈦礦膜與載子傳遞層之間的界面缺陷會使鈣鈦礦膜吸光產生的電子電洞再結合無法順利傳遞到外線路，而鈣鈦礦膜的晶界處易被水降解，導致PSCs元件的光電轉換效率降低及穩定性變差。本研究透過在鉛鈣鈦礦前驅溶液中添加非富勒烯小分子材料(TIIQ-b16或DPPQ-b16)並透過旋轉塗佈法來製備含添加劑之鈣鈦礦膜，含TIIQ-b16和DPPQ-b16之鈣鈦礦膜分別稱T-PSK和D-PSK，而將PDTON加入在反溶劑中所製備的鈣鈦礦膜稱T-PSK@PD和D-PSK@PD，未添加任何添加劑的鈣鈦礦膜稱PSK，將上述五種鈣鈦礦膜稱為(PSK-TD)。FT-IR穿透光譜顯示TIIQ-b16和DPPQ-b16與PbI2混合後其氰基吸收峰分別往低波數位移10 cm-1和8 cm-1，表示這兩個分子中的氰基上未鍵結的電子會與鈣鈦礦膜中配位未飽和的Pb2+配位。從SEM表面形貌圖看到以T-PSK@PD膜最為平整且晶粒最大，PL強度以T-PSK@PD最強，(100)晶面的繞射峰強度也是T-PSK@PD最強，顯示T-PSK@PD膜品質最好。在PSK-TD上沉積Spiro-OMeTAD膜的TRPL圖所測得的激子半生期以Spiro-OMeTAD沉積在T-PSK@PD最短，表示添加TIIQ-b16和PDTON的鈣鈦礦膜較能順利的將電洞傳遞至電洞傳遞層。以PSK、T-PSK、D-PSK、T-PSK@PD和D-PSK@PD作為吸收層所組裝的元件最高光電轉換效率分別為20.89%、21.39%、21.23%、22.01%和21.70%。以T-PSK@PD和D-PSK@PD作為吸光層所組裝的元件在未封裝且放置在手套箱中，經1920小時後，效率仍維持原始效率的95%和94%，在相同測試環境下，以PSK作為吸收層所組裝的元件僅剩原始效率的82%，以T-PSK和D-PSK做為吸收層所組裝的元件經960小時維持原效率的95%和93%。;The interface defects between perovskite absorber and hole transport layer (HTL) of perovskite solar cells (PSCs) will cause electrons and holes recombination, decreasing the power conversion efficiency and long-term stability of PSCs. In this study, non-fullerene small molecules (TIIQ-b16 and DPPQ-b16) were used as additives for perovskite precursor solutions and the resulting perovskite films were called T-PSK and D-PSK, respectively. Furthermore, when PDTON was used as an additive of antisolvent (CB) to crystallize perovskite films, the resulting films were called T-PSK@PD and D-PSK@PD. The perovskite film prepared without any additive was called PSK. FT-IR transmission spectra indicate that the cyano absorption peaks of TIIQ-b16 and DPPQ-b16 have a shift 10 cm⁻¹ and 8 cm⁻¹ to lower wavenumbers respectively when they were mixed with PbI₂, suggesting a coordination interaction between the lone pair electrons on the cyano groups and the unsaturated Pb²⁺ sites in perovskite film. SEM images show that T-PSK@PD is the smoothest film with the largest grains. PL intensity and XRD data suggested that T-PSK@PD is the best quality film. TRPL curve also show that Spiro-OMeTAD-coated on PSK-TD film has the shortest exciton half-life, these data reveal that perovskite film prepared with TIIQ-b16 (in precursor solution) and PDTON (in anti-solvent) additives has the highest quality. Devices based on PSK, T-PSK, D-PSK, T-PSK@PD, and D-PSK@PD absorbers achieve the maximum PCEs of 20.89%, 21.39%, 21.23%, 22.01%, and 21.70% respectively. Devices using T-PSK@PD and D-PSK@PD as the absorption layers maintained 95% and 94%, respectively of their initial efficiency after 1920 hours of storing in a glove box without encapsulation, while device used PSK as absorber retained only 82% of their initial efficiency under the same conditions, while device used T-PSK and D-PSK as the absorber retained 95% and 93%, respectively of their initial efficiency after 960 hours
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