低溫電漿輔助原子層沉積法鍍製抗反射膜之低應力研究;Investigation of Low Stress in Anti-Reflective Coatings Fabricated by Low-Temperature Plasma-Enhanced Atomic Layer Deposition

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題名:	低溫電漿輔助原子層沉積法鍍製抗反射膜之低應力研究;Investigation of Low Stress in Anti-Reflective Coatings Fabricated by Low-Temperature Plasma-Enhanced Atomic Layer Deposition
作者:	柯冠宇;Ko, Kuan-Yu
貢獻者:	光電科學與工程學系
關鍵詞:	原子層沉積法;應力;抗反射膜;ALD;stress;AR coating
日期:	2024-07-22
上傳時間:	2024-10-09 15:38:03 (UTC+8)
出版者:	國立中央大學
摘要:	本論文使用電漿輔助原子層沉積法鍍製抗反射膜於玻璃基板，固定製程溫度於70°C，使用氧氣混合氬氣的氧化方式，探討不同厚度、不同電漿瓦數下TiO2、SiO2的光學特性與機械應力，並以無膜裂之最佳參數電漿功率150W鍍製抗反射膜。經X光繞射儀測得TiO2單層膜與基板訊號一致、TEM橫截面與電子繞射環無任何晶粒與光斑產生，呈現非晶態。使用原子力顯微鏡分析薄膜表面，其平均粗糙度約為0.2±0.05nm。應力量測使用Fizeau 干涉儀，TiO2單層膜隨著循環次數增加穩定於約220±10MPa，而SiO2單層膜隨著循環次數增加穩定於約-35±15MPa。最終結果顯示，四層抗反射膜在400nm~700nm可見光波段的反射光譜平均反射率達0.35%，應力值為48MPa，驗證了使用呈現張應力的TiO2與呈現壓應力的SiO2可達到抵消應力的效果。 ;In this work, a plasma assisted atomic layer deposition method was utilized to deposit an anti-reflective coating on glass substrates at a fixed process temperature of 70°C, using an oxygen/argon gas mixture for oxidation. Optical properties and mechanical stress of different thicknesses TiO2 and SiO2 at various plasma power levels were investigated. The anti-reflective coating was deposited using the optimal plasma power of 150W, which did not result in film cracking. XRD measurements showed that the TiO2 single-layer film signal was consistent with the substrate signal, and TEM cross section along with an electron diffraction ring confirmed amorphous state without grains or spots. AFM analysis of the film surface revealed an average roughness of about 0.2±0.05nm. Stress measurements using a Fizeau interferometer demonstrated that the TiO2 film stabilized at about 220±10MPa with increasing cycles, while the SiO2 film stabilized at about -35±15MPa. The results indicated that the four-layer anti-reflective coating provided an average reflectance of 0.35% over a visible light spectrum from 400nm to 700nm. The stress value of 48MPa verified that using TiO2 with tensile stress and SiO2 with compressive stress can effectively cancel out stress.
顯示於類別:	[光電科學研究所] 博碩士論文

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