利用離子助鍍電子槍蒸鍍法鍍製抗四氟化碳電漿之抗腐蝕薄膜與鈍化層生成之研究;Investigation on the Fabrication of Corrosion-Resistant Coatings and Passivation Layers Against CF₄ Plasma Using Ion-Assisted Electron Beam Evaporation

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題名:	利用離子助鍍電子槍蒸鍍法鍍製抗四氟化碳電漿之抗腐蝕薄膜與鈍化層生成之研究;Investigation on the Fabrication of Corrosion-Resistant Coatings and Passivation Layers Against CF₄ Plasma Using Ion-Assisted Electron Beam Evaporation
作者:	紀孟甫;Chi, Meng-Fu
貢獻者:	光電科學與工程學系
關鍵詞:	氧化釔;釔鋁石榴石;抗腐蝕薄膜;Y2O3;YAG;Anti-Plasma
日期:	2024-07-22
上傳時間:	2024-10-09 15:38:07 (UTC+8)
出版者:	國立中央大學
摘要:	本研究採用離子助鍍電子槍蒸鍍系統來鍍製氧化釔(Y2O3)、釔鋁石榴石(YAG)及釔鋁石榴石(YAG)摻雜稀土元素材料，調整不同離子源電壓參數鍍製抗腐蝕薄膜，透過微波電漿蝕刻(CF4/O2/Ar)後找出其最佳抗電漿腐蝕薄膜以及其參數。經過微波電漿蝕刻機固定微波功率及氣體比例蝕刻兩個小時後，從XPS分析可知氧化釔(Y2O3)、釔鋁石榴石(YAG)及釔鋁石榴石(YAG)摻雜稀土元素材料在不同離子源電壓時有不同的Y-F濃度，當有較高的Y-F濃度時有較好的擴散速率。在經過長時間的蝕刻又以YAG 摻雜稀土元素最為抗電漿腐蝕。從FIB圖可以發現蝕刻兩個小時後氧化釔(Y2O3)、釔鋁石榴石(YAG)及釔鋁石榴石(YAG)摻雜稀土元素材料時有較慢的生長速率，分別為0.00713 Å/s、0.0667 Å/s及0.0045 Å/s，經過長時間蝕刻後也是YAG 摻雜稀土元素之生長速率趨於穩定。經過OM的觀察也可以發現YAG 摻雜稀土元素膜面經過長時間蝕刻後有較少微粒汙染。 YAG 摻雜擁有不錯的氟擴散速率表示其生成鈍化層的品質較佳，以及經過長時間蝕刻可以更快速的達到穩定減緩其生長速率，並且微粒汙染較少，因此YAG 摻雜之抗電漿腐蝕能力最為出色。 ;This study utilized an ion-assisted deposition electron gun evaporation system to fabricate yttrium oxide (Y2O3), yttrium aluminum garnet (YAG), and rare-earth-doped yttrium aluminum garnet (YAG) materials. Corrosion-resistant films were produced by adjusting various ion source voltage parameters. The optimal plasma corrosion-resistant film and its parameters were identified through microwave plasma etching (CF4/O2/Ar). After etching for two hours with a fixed microwave power and gas ratio in the microwave plasma etcher, XPS analysis revealed different Y-F concentrations in yttrium oxide (Y2O3), yttrium aluminum garnet (YAG), and rare-earth-doped yttrium aluminum garnet (YAG) under different ion source voltages. Higher Y-F concentrations were associated with better diffusion rates. Among these, rare-earth-doped YAG exhibited the highest resistance to plasma corrosion after prolonged etching. FIB images indicated that after two hours of etching, yttrium oxide (Y2O3), yttrium aluminum garnet (YAG), and rare-earth-doped yttrium aluminum garnet (YAG) showed slower growth rates of 0.00713 Å/s, 0.0667 Å/s, and 0.0045 Å/s, respectively. Prolonged etching also stabilized the growth rate of rare-earth-doped YAG. Observations from OM revealed that the surface of the rare-earth-doped YAG film had fewer particulate contaminants after extended etching. The enhanced fluorine diffusion rate in doped YAG suggests the formation of a superior passivation layer. Prolonged etching leads to a more stable and reduced growth rate, coupled with fewer particulate contaminants. Consequently, rare earth element-doped YAG demonstrates exceptional plasma corrosion resistance.
顯示於類別:	[光電科學研究所] 博碩士論文

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