本論文研發第二個晶片為用於X頻段接收機的低雜訊放大器設計，此顆晶片為使用穩懋0.15 μm GaAs製程所製作的低雜訊放大器，電路架構採用電流再利用(Current-Reused)，以架構降低其耗電量，電路最大增益為20 dB，雜訊最小值為1.35 dB，量測功耗為24 mW，晶片面積為1.11×1.1 mm2。;Novel designs of transmitting and receiving amplifiers applied for X-band (9~10GHz) radar communications are proposed, investigated, implemented, measured, tested and verified in this thesis. With rapidly growing applications of the Internet of Things (IoT) concept, most applications are equipped with communication functionality, thus emphasizing the importance of power consumption reduction in transceiver systems. Accordingly, the designs proposed in this thesis inevitably focus on increase of power gain with reduction of overall power consumption of a single chip.
The first chip designed in this thesis is a power amplifier working in a X-band transmitter. This chip is fabricated using a 0.15 μm GaN process from WIN. The circuit employs a cascade configuration to increase its gain. Its small-signal gain is up to 25 dB, with a saturation output power exceeding 2 W, and the best efficiency is 30%. The chip occupies an area only of 2.35×1.75 mm².
The second chip is a low-noise amplifier designed for X-band receivers. This chip is fabricated using a 0.15 μm GaAs process from WIN. The circuit architecture adopts a Current-Reused structure to reduce power consumption. The circuit gain is 20 dB, with a minimum noise figure of 1.5 dB. The measured power consumption is 24 mW, and the chip occupies an area only of 1.11×1.106 mm²
