低溫熱處理製備軟性基板全無機鈣鈦礦發光二極體之研究;The Study of All-Inorganic Perovskite Flexible Substrate Light-Emitting Diodes Prepared by Low-Temperature Thermal Process

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题名:	低溫熱處理製備軟性基板全無機鈣鈦礦發光二極體之研究;The Study of All-Inorganic Perovskite Flexible Substrate Light-Emitting Diodes Prepared by Low-Temperature Thermal Process
作者:	許凱翔;Xu, Kai-Xiang
贡献者:	機械工程學系
关键词:	鈣鈦礦;低溫熱退火;Perovskite;Low temperature thermal annealing
日期:	2024-08-15
上传时间:	2024-10-09 17:26:56 (UTC+8)
出版者:	國立中央大學
摘要:	發光二極體(light-emitting diodes, LED)是一種將電能轉化為光能的元件，當電子和電洞在主動層中進行輻射複合時，便會產生出能量與其能階相符的光。歷經多年發展仍持續進步，對人類生活產生深遠影響。鈣鈦礦材料因為具有可調的發光波長、可控的能隙、可以透過簡易以及低成本的製程方式製造，讓鈣鈦礦材料被廣泛運用在光電領域中，如應用於太陽能電池，光電探測器及LED中。本研究利用真空鍍膜技術研發鈣鈦礦LED，並應用於PET基板之上。然而，由於基板耐熱性質較低，無法承受高溫熱處理，因此更改熱處理溫度以配合基板性能，並導入氧化鋅做電子傳輸層進一步提升元件效率。經實驗發現，使用退火溫度70°C並延長退火時間至210分鐘能夠使薄膜的晶粒成長，降低熱處理溫度避免基板的翹曲和損壞問題。最終，元件的結構為PET/ITO/ALD-ZnO/CsPbBr3/C，元件最大輝度為1166 cd/m2。 ;The light-emitting diode (LED) is a device that converts electrical energy into light. When electrons and holes undergo radiative recombination in the active layer, light with energy corresponding to their energy levels is emitted. Despite years of development, LEDs continue to advance and have a profound impact on human life. Perovskite materials have become widely used in optoelectronics due to their tunable emission wavelengths, controllable band gaps, and ability to be manufactured through simple and low-cost processes. These materials have found applications in solar cells, photodetectors, and LEDs. In this work, we developed perovskite LEDs using vacuum deposition technology and applied them onto PET substrates. However, due to the low heat resistance of the substrates, which cannot withstand high-temperature treatments, we adjusted the annealing temperature to match the substrate′s properties. Additionally, we incorporated zinc oxide as an electron transport layer to further improve the device′s efficiency. The experiments showed that increasing the annealing time to 210 minutes at 70°C helps the film′s grains grow. Reduced the risk of substrate warping and damage by avoiding high temperatures. The final device structure was PET/ITO/ALD-ZnO/CsPbBr3/C, with a maximum luminance of 1166 cd/m².
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