磊晶成長氮化鎵異質結構於多晶氧化鋁基板之研究;Epitaxial Growth of Gan-Based Heterostructures on Poly-Aln Substrates

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/99062

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/99062

Title:	磊晶成長氮化鎵異質結構於多晶氧化鋁基板之研究;Epitaxial Growth of Gan-Based Heterostructures on Poly-Aln Substrates
Authors:	綦振瀛
Contributors:	國立中央大學電機工程學系
Keywords:	氮化鎵;氮化硼;氮化鋁;GaN;BN;AlN
Date:	2026-01-22
Issue Date:	2026-01-23 16:35:15 (UTC+8)
Publisher:	國家科學及技術委員會(本會)
Abstract:	本計畫擬以氮化硼為中介層，磊晶成長HEMT結構於多晶氮化鋁基板上，以提升元件散熱能力，降低生產成本，若能順利達成目標，可在現有功率元件市場上獨樹一幟，為我國產業另闢一個新機會。
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	6	View/Open

社群 sharing