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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/108507


    題名: Configurable Cubical Redundancy Schemes for Channel-Based 3-D DRAM Yield Improvement
    作者: 鄭政誠;Lin, Bing-Yang;Chiang, Wan-Ting;Wu, Cheng-Wen;Lee, Mincent;Lin, Hung-Chih;Peng, Ching-Nen;Wang, Min-Jer
    貢獻者: 文學院歷史研究所
    關鍵詞: 3D DRAM;Algorithm design and analysis;built-in self-repair (BISR);Built-in self-test;built-in self-test (BIST);Channels;Circuit faults;Configurable;Dies;Dynamic random access memory;Electronic equipment tests;Maintenance engineering;memory testing;Random access memory;Redundancy;redundancy analysis (RA);redundancy repair;Stacking;Three dimensional;Three-dimensional displays;yield improvement
    日期: 2016-04-01
    上傳時間: 2026-04-23 14:52:39 (UTC+8)
    出版者: IEEE Computer Society;Piscataway: IEEE Computer Society
    摘要: 摘要: Three-dimensional stacked memory stacking logic and memory dies are one of the most promising 3-D integration applications. This paper proposes two memory redundancy schemes to improve the yield of channel-based 3-D stacked DRAM by sharing spare memory across dies and satisfying channel constraints at the same time. The proposed schemes achieve much higher yield with very small area overhead than other memory redundancy schemes.
    其他題名: DTM
    出版者: Piscataway: IEEE Computer Society
    出版日期: 2016-04-01
    出處: IEEE design and test, 2016-04, Vol.33 (2), p.30-39
    資源來源: IEEE Electronic Library (IEL)
    版權: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016
    識別號: ISSN: 2168-2356
    識別號: EISSN: 2168-2364
    識別號: DOI: 10.1109/MDAT.2015.2455347
    識別號: CODEN: IDTCEC
    顯示於類別:[歷史研究所] 期刊論文

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