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显示项目861-870 / 951. (共96页) << < 82 83 84 85 86 87 88 89 90 91 > >> 每页显示[10|25|50]项目

日期	题名	作者
1994	UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS	HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ
1994	VARIABLE-STRUCTURE CONTROL DESIGN FOR UNCERTAIN DISCRETE-TIME-SYSTEMS	WANG,WJ; WU,GH; YANG,DC
1994	VARIABLE-STRUCTURE MODEL-FOLLOWING ADAPTIVE-CONTROL FOR SYSTEMS WITH TIME-VARYING DELAY	SHYU,KK; YAN,JJ
1994	A CLASS OF SCHNEIDER WRITE EQUALIZERS FOR A (1,K) PEAK DETECTION CHANNEL	LIN,YY; LIU,PH; HUANG,CM
1994	A LEARNING-MODEL OF THE FEATURE-DETECTING CELLS FOR UNSUPERVISED PATTERN-CLASSIFICATION	WANG,WJ; LEE,DL
1994	A NEW METHOD FOR ISOCHRONOUS BANDWIDTH ALLOCATION IN FDDI-II NETWORKS	WU,JS; YEH,SC
1994	AN EFFICIENT ANALYTICAL MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON	TSAI,YT; HONG,KD; YUAN,YL
1994	BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE	SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW
1994	CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS	CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
1994	CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS	YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL

显示项目861-870 / 951. (共96页) << < 82 83 84 85 86 87 88 89 90 91 > >> 每页显示[10|25|50]项目