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Wide-stopband microstrip bandpass f...
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Thermal stability improvement by us...
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顯示項目326-350 / 951. (共39頁)
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題名
作者
2005
Electrically-driven spontaneous emission spectrum of a single quantum dot
Kuo,DMT
;
Chang,YC
2005
Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition
Chang,WH
;
Chen,HY
;
Chang,HS
;
Chen,WY
;
Hsu,TM
;
Hsieh,TP
;
Chyi,JI
;
Yeh,NT
2005
Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature
Chen,WY
;
Chang,WH
;
Chang,HS
;
Hsu,TM
;
Lee,CC
;
Chen,CC
;
Luan,PG
;
Chang,JY
;
Hsieh,TP
;
Chyi,JI
2005
Fast decomposition of filterbanks for the state-of-the-art audio coding
Huang,SW
;
Tsai,TH
;
Chen,LG
2005
Feature-based error concealment for object-based video
Lee,PJ
;
Chen,HH
;
Wang,WJ
;
Chen,LG
2005
Floquet wave-based analysis of transient scattering from doubly periodic, discretely planar, perfectly conducting structures
Chen,NW
;
Lu,MY
;
Capolino,F
;
Shanker,B
;
Michielssen,E
2005
H-2/H-infinity robust static output feedback control design via mixed genetic algorithm and linear matrix inequalities
Sun,CC
;
Chung,HY
;
Chang,WJ
2005
High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-mu m wavelength
Wu,YS
;
Shi,JW
;
Wu,JY
;
Huang,FH
;
Chan,YJ
;
Huang,YL
;
Xuan,R
2005
High-speed, high-responsivity, and high-power performance of near-ballistic uni-traveling-carrier photodiode at 1.55-mu m wavelength
Shi,JW
;
Wu,YS
;
Wu,CY
;
Chiu,PH
;
Hong,CC
2005
High-temperature high-humidity and electrical static discharge stress effects on GaN p-i-n UV sensor
Liu,SS
;
Li,PW
;
Lan,WH
;
Lin,WJ
2005
Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector
Chiu,WY
;
Huang,FH
;
Wu,YS
;
Lin,DM
;
Chan,YJ
;
Chen,SH
;
Chyi,JI
;
Shi,JW
2005
Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection
Liu,SS
;
Li,PW
;
Lan,WH
;
Lin,WJ
2005
Infrared wavelength quantum communications based on single electron transistors
Kuo,DMT
2005
InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth
Chiu,PC
;
Yeh,NT
;
Hong,CC
;
Hsieh,TP
;
Tsai,YT
;
Ho,WJ
;
Chyi,JI
2005
Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
Lin,HF
;
Wu,CT
;
Chien,WC
;
Chen,SW
;
Kao,HL
;
Chyi,JI
;
Chen,JS
2005
Low resistance WSix-based ohmic contacts on n-type GaN
Pan,CC
;
Chen,MS
;
Lee,CM
;
Chyi,JI
2005
Multi-gigabit pre-emphasis design and analysis for serial link
Lin,CH
;
Tsai,CH
;
Chen,CN
;
Jou,SJ
2005
Noncoherent block detection of multiple-pulse equicorrelated modulation signals
Chung,CD
;
Cho,SM
2005
Optical control of the exciton charge states of single quantum dots via impurity levels
Chang,WH
;
Chang,HS
;
Chen,WY
;
Hsu,TM
;
Hsieh,TP
;
Chyi,JI
;
Yeh,NT
2005
Optical emission from individual InGaAs quantum dots in single-defect photonic crystal nanocavity
Chang,WH
;
Chen,WY
;
Chang,HS
;
Hsu,TM
;
Hsieh,TP
;
Chyi,JI
2005
Optical piezoelectric transducer for nano-ultrasonics
Lin,KH
;
Chern,GW
;
Yu,CT
;
Liu,TM
;
Pan,CC
;
Chen,GT
;
Chyi,JI
;
Huang,SW
;
Li,PC
;
Sun,CK
2005
Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix
Liu,WS
;
Chyi,JI
2005
Optimal controller of a buck DC-DC converter using the uncertain load as stochastic noise
Hsieh,FH
;
Yen,NZ
;
Juang,YT
2005
Orthogonally multiplexed on-off-keyed amplitude and phase modulation families
Chung,CD
;
Liaw,HS
2005
Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication.
Wang,WK
;
Lin,PC
;
Lin,CH
;
Lin,CK
;
Chan,YJ
;
Chen,GT
;
Chyi,JI
顯示項目326-350 / 951. (共39頁)
<<
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13
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每頁顯示[
10
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]項目
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