CMOS-MEMS勞倫茲力磁感測器之研製

NCUIR > Engineering College > Graduate Institute of Mechanical Engineering > Electronic Thesis & Dissertation > Item 987654321/86998

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/86998

Title:	CMOS-MEMS勞倫茲力磁感測器之研製
Authors:	陳柏儒;Chen, Po-Ju
Contributors:	機械工程學系
Keywords:	CMOS-MEMS;磁感測器;勞倫茲力
Date:	2021-09-10
Issue Date:	2021-12-07 13:38:40 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究提出一種基於勞倫茲力原理之電容式磁感測器，透過勞倫茲力作用於元件結構上造成感測電容間距的改變，並搭配電容讀取電路完成磁場的量測。在製作上採用UMC 0.18 m 1P6M CMOS製程，實現機械結構以及電路布局，並結合台灣半導體研究中心所提供之標準後製程，進行結構的懸浮。藉由CMOS-MEMS整合技術，我們期望開發多種MEMS元件，並借助半導體製程之穩定性，提升元件良率及性質。;In this paper, we presented a capacitive magnetic sensor based on the principle of Lorentz force. The Lorentz force acted on the device will change the gap between capacitor plates, so the magnetic field can be sensed by the readout circuit. In fabrication process, we used UMC 0.18 m 1P6M CMOS process to achieve our device, and used post-process which is provided by TSRI to suspend the MEMS structure. With standard CMOS process, we expect the reliability and performance will be increased.
Appears in Collections:	[Graduate Institute of Mechanical Engineering] Electronic Thesis & Dissertation

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