本研究使用甲基胺碘化物鈣鈦礦(Methylammonium lead iodide, MAPbI3)，結合不同功函數的ZnO奈米顆粒(Zinc oxide nanoparticles, ZnO.NPs)作為電子傳輸層，並加入聚乙烯亞胺(Polyethyleneimine, PEI)緩衝層以改善界面穩定性。 研究光偵測器元件過程中，首先會分析標準元件特性，並與添加不同功函數ZnO的光偵測器進行性能比較。結果顯示，透過不同功函數ZnO和PEI緩衝層的引入，元件的外部量子效率(External Quantum Efficiency, EQE)從4 %提升至65 %，響應度(Responsivity, R)從0.016 A/W提升至0.297 A/W。此外，本研究優化了元件的通道尺寸，進一步提升元件性能。 本研究後續將光偵測器與電晶體結合，並探討ZnO功函數對光敏電晶體工作機制及性能的影響。藉由光閘效應，元件的開關比從255提升至8642，外部量子效率提升至125 %，響應度達到0.573 A/W。最終實現了元件的開關控制與性能優化，完成了鈣鈦礦光敏電晶體的開發。 ;This study develops perovskite photodetectors and phototransistors based on zinc oxide (ZnO). Methylammonium lead iodide perovskite (MAPbI3) served as the active layer, combined with ZnO nanoparticles (ZnO.NPs) with tunable work functions as the electron transport layer. A polyethyleneimine (PEI) buffer layer was introduced to improve interface stability. Photodetector performance was analyzed by comparing standard devices with those incorporating ZnO with different work functions. Results showed that work function tuning and the PEI buffer layer increased the external quantum efficiency (EQE) from 4% to 65% and responsivity from 0.016 A/W to 0.297 A/W. Channel dimension optimization further enhanced device performance. The photodetectors were integrated with transistors to explore the effects of ZnO work functions on phototransistor mechanisms and performance. Through the photogating effect, the on/off ratio increased from 255 to 8642, EQE reached 125%, and responsivity improved to 0.573 A/W. This study achieved device switching control and performance optimization, completing the development of perovskite phototransistors.
