本論文主要研究可程式化寬頻分數型頻率合成器模組與毫米波多容值共振並聯二極體切換器的設計與實現。頻率合成器在現代射頻收發系統中扮演關鍵角色，依靠其本地振盪源的精確訊號生成能力及鎖相迴路技術，提供穩定的訊號源，適用於發射端與接收端的升降頻所需時脈源。而發射機銜接放大器與天線的切換器在近期研究卻很少有同時具有瓦特級與低損耗高隔離度之效能，此情形會造成功率放大器的輸出功率無法有效傳達至天線。 第二章利用ATmega2560微控制器的指令功能與計算，編寫了一套用於第三章所提到的分數型頻率合成器模組的程式，使其能夠根據系統需求動態調整頻率輸出和參考頻率等等之功能，大大提高了系統的操作便利性和可控性。 第三章詳細描述了將亞德諾半導體(Analog Device)公司生產的分數型頻率合成器開發成模組的過程。我們進行了理論分析，包括迴路轉移函數和迴路增益等，以及實驗結果的驗證。透過對迴路穩定度的研究，我們證明了這些模組在設計和應用中的可靠性和穩定性。 第四章利用穩懋公司所提供的GaAs .15μm PINHEMT製程設計的毫米波電容共振四分之一波長單刀雙擲切換器的不同架構。我們將傳統的四分之一波長與串並式切換器結合做延伸，使用串並式二極體作為開關。由於III-V族製程背向通口的寄生電感，本章提出多種電容大小與之共振以消除其寄生效應，達到更好的隔離度頻寬。並成功實現輸入1 dB壓縮點大於35 dBm、插入損耗小於2 dB且隔離度大於20 dB的高功率低損耗高隔離度切換器。 最後第五章為本論文之總結與未來研究發展方向。在本章中，我們將對本論文的主要研究結果進行總結，並探討未來的研究方向和可能的應用領域。這將有助於指導未來相關領域的研究和應用。;This thesis primarily investigates the design and implementation of a programmable wideband fractional frequency synthesizer module and a millimeter-wave multi-capacitance-resonance shunt-diode switch. Frequency synthesizers play a crucial role in modern RF transceiver systems, providing stable signal sources for both transmission and reception through precise signal generation capabilities of their local oscillators and phase-locked loop techniques, suitable for clock sources required for up-conversion and down-conversion at the transmitter and receiver ends. However, recent research has shown limited performance in achieving both watt-level power handling and low-loss high-isolation characteristics in the switch between the transmitter power amplifier and the antenna. This situation results in ineffective transmission of the output power of the power amplifier to the antenna, affecting system efficiency. In Chapter two, a program was developed utilizing the instruction set and computational capabilities of the ATmega2560 microcontroller. This program is designed for the fractional-N frequency synthesizer module mentioned in chapter three. It enables dynamic adjustment of frequency output and reference frequency according to system requirements, significantly enhancing the system′s operational convenience and controllability. Chapter three provides a detailed process of developing a module from the fractional-N frequency synthesizer produced by Analog Devices. The chapter includes theoretical analysis such as transfer function and loop gain, as well as validation of experimental results. Through studying loop stability, we demonstrate the reliability and stability of these modules in both design and application. Chapter four presents various architectures of millimeter-wave capacitor-resonant quarter-wavelength single-pole double-throw switches designed using the GaAs .15μm PINHEMT process provided by Win Semiconductors. We extend the conventional quarter-wavelength and series-parallel switch combination by employing series-parallel diodes as switches. Due to the parasitic inductance of the III-V process back-gate via, this chapter proposes multiple capacitor sizes and resonances to mitigate its parasitic effects, achieving improved isolation bandwidth. We successfully achieve a high-power, low-loss, high-isolation switch with input 1 dB compression point greater than 35 dBm, insertion loss less than 2 dB, and isolation greater than 20 dB. Final chapter summarizes the thesis and outlines future research directions. In this chapter, we summarize the main research findings of this thesis and discuss potential future research directions and application areas. This will aid in guiding future research and applications in related fields.
