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类别	日期	题名	作者
[電機工程研究所] 期刊論文	2005	Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors	Chu,SNG; Ren,F; Pearton,SJ; Kang,BS; Kim,S; Gila,BP; Abernathy,CR; Chyi,JI; Johnson,WJ; Lin,J
[電機工程研究所] 期刊論文	2004	2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier	Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
[電機工程研究所] 期刊論文	2004	AlGaN/GaN HEMT based liquid sensors	Mehandru,R; Luo,B; Kang,BS; Kim,J; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2004	Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates	Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY
[電機工程研究所] 期刊論文	2003	Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors	Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG