中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Items for Author

中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Items for Author

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Items for Author "Zhang,AP"

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Showing 13 items.

Collection	Date	Title	Authors	Bitstream
[化學工程與材料工程研究所] 期刊論文	2002	Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers	Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
[光電科學與工程學系] 期刊論文	2001	Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
[物理研究所] 期刊論文	2000	Temperature dependent performance of GaN Schottky diode rectifiers	Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2001	GaN electronics for high power, high temperature applications	Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2001	Vertical and lateral GaN rectifiers on free-standing GaN substrates	Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
[電機工程研究所] 期刊論文	2000	Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers	Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2000	High voltage GaN Schottky rectifiers	Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2000	Processing and device performance of GaN power rectifiers	Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
[電機工程研究所] 期刊論文	2000	Spatial distribution of electrical properties in GaN p-i-n rectifiers	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Surface and bulk leakage currents in high breakdown GaN rectifiers	Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Temperature dependence of GaN high breakdown voltage diode rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2000	Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM
[電機工程研究所] 期刊論文	1999	Growth and device performance of GaN Schottky rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG

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