"Zhang,AP"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [化學工程與材料工程研究所] 期刊論文 |
2002 |
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers |
Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [光電科學與工程學系] 期刊論文 |
2001 |
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM |
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| [物理研究所] 期刊論文 |
2000 |
Temperature dependent performance of GaN Schottky diode rectifiers |
Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2001 |
Vertical and lateral GaN rectifiers on free-standing GaN substrates |
Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2000 |
High voltage GaN Schottky rectifiers |
Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Surface and bulk leakage currents in high breakdown GaN rectifiers |
Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Temperature dependence of GaN high breakdown voltage diode rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM |
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| [電機工程研究所] 期刊論文 |
1999 |
Growth and device performance of GaN Schottky rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG |
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