參考文獻 |
[1] C. C. Huang. “Semiconductor Devices with 16nm Technology”, NARL Quarterly, 28, pp. 86-91, Oct. 2010.
[2] C.H. Pai, “Development of 3D Impact-Ionization Model and its Applications to Breakdown Simulation of Spherical P-N Junction”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, July. 2011.
[3] C. C. Chang, “Verification of 1D BJT Numerical Simulation and its Application to Mixed Level Device and Circuit Simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2001.
[4] R. N. Chang, “Parameter Extraction of Impact Ionization Rate in Two-Dimensional PIN Diode Simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2011.
[5] C. C. Chang, C. H. Huang, J. F. Dai, S. J. Li, and Y. T. Tsai, “3-D Numerical Device Simulation Including Equivalent-Circuit Model”, IEDMS, 2002.
[6] P. C. H. Chan and C. T. Sah, “Exact Equivalent Circuit Model for Steady-state Characterization of Semiconductor Devices with Multiple-Energy-Level Recombination Centers”, IEEE Transactions Electron Devices, vol. ED-26, no. 6, pp. 924-936, 1979.
[7] C. L. Teng, “An Equivalent Circuit Approach to Mixed-Level Device and Circuit Simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 1997.
[8] Z. C. Liu, “Comparison of Two Potential Variables in Mixed-Level Device and Circuit Simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 1998.
[9] C. C. Chang, J. F. Dai, and Y. T. Tsai, “Verification of 1D BJT Numerical Simulation and its Application to Mixed-Level Device and Circuit Simulation”, Int. J. of Numerical Modelling: Electronic Networks. Devices and Fields, pp. 81-94, 2003.
[10] S. J. Li, “An Equivalent Circuit of Impact-Ionization and its Applications on Semiconductor Devices”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, Jun. 2002
[11] Ben G. Streetman and Sanjay Banerjee, “Solid State Electronic Devices”, Prentice Hall, 2000.
[12] Dr. Simon M. Sze, “Semiconductor Devices: Physics and Technology, 2nd Ed.”, 564 pages, Wiley, New York, 2002.
[13] Y. S. Tso, “Analysis and Simulation Cylindrical Coordinates of Curved P-N Junction Properties”, M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China, Jun. 2002.
[14] P. S. Chang, “Development of 2D Template Device Simulator Including Impact Ionization Models”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, June. 2006.
[15] M. S. Li, “Rectangular Transform of Trapezoidal Mesh and Its Application to Cylindrical MOSFETs”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, June. 2011.
[16] C. H. Lee, “A Small-Angle Method for Breakdown Simulation in 2D Circular P-N Junction”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, June. 2011.
[17] Dr. Simon M. Sze, “Semiconductor Devices: Physics and Technology, 2nd Ed.”, 564 pages, Wiley, New York, 2002.
[18] J. Z. Wang, “Curvature Effect and Back Gate Bias Effect on Semiconductor Device Breakdown Simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, June. 2009.
|