Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29280

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29280

Title:	Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching
Authors:	Chang,MN;Chuo,CC;Lu,CM;Hsieh,KC;Yeh,NT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;INDUCED DAMAGE;DEFECTS;ALGAAS/GAAS;LAYER
Date:	1999
Issue Date:	2010-06-29 20:20:44 (UTC+8)
Publisher:	中央大學
Abstract:	The role of excess As in low-temperature (LT) grown Be doped, undoped and Si-doped GaAs subjected to BCl3/Ar reactive ion etching has been investigated using transmission electron microscopy and atomic force microscopy. Etching rate and the extent of ion damage are found to depend on the doping type and thermal treatment. For as-grown LT-GaAs, significant decrease in etching rate is observed as the dopant is changed from Be to Si. Thermal treatment by rapid thermal annealing slightly increases the etching rate of GaAs grown at low temperature while it increases the etching rate significantly for the samples grown at normal temperature. In addition, as-grown LT-GaAs also exhibits superior resistance to the ion damage of reactive ion etching. (C) 1999 American Institute of Physics. [S0003-6951(99)03345-8].
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	490	View/Open

社群 sharing