中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/29280
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 69561/69561 (100%)
造訪人次 : 23656165      線上人數 : 606
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29280


    題名: Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching
    作者: Chang,MN;Chuo,CC;Lu,CM;Hsieh,KC;Yeh,NT;Chyi,JI
    貢獻者: 電機工程研究所
    關鍵詞: MOLECULAR-BEAM EPITAXY;INDUCED DAMAGE;DEFECTS;ALGAAS/GAAS;LAYER
    日期: 1999
    上傳時間: 2010-06-29 20:20:44 (UTC+8)
    出版者: 中央大學
    摘要: The role of excess As in low-temperature (LT) grown Be doped, undoped and Si-doped GaAs subjected to BCl3/Ar reactive ion etching has been investigated using transmission electron microscopy and atomic force microscopy. Etching rate and the extent of ion damage are found to depend on the doping type and thermal treatment. For as-grown LT-GaAs, significant decrease in etching rate is observed as the dopant is changed from Be to Si. Thermal treatment by rapid thermal annealing slightly increases the etching rate of GaAs grown at low temperature while it increases the etching rate significantly for the samples grown at normal temperature. In addition, as-grown LT-GaAs also exhibits superior resistance to the ion damage of reactive ion etching. (C) 1999 American Institute of Physics. [S0003-6951(99)03345-8].
    關聯: APPLIED PHYSICS LETTERS
    顯示於類別:[電機工程研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML381檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋  - 隱私權政策聲明