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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29308


    Title: Improvement of current injection of porous silicon
    Authors: Chen,YA;Liang,NY;Laih,LH;Tsay,WC;Chang,MN;Hong,JW
    Contributors: 電機工程研究所
    Date: 1997
    Issue Date: 2010-06-29 20:21:25 (UTC+8)
    Publisher: 中央大學
    Abstract: n-i-p-n hydrogenated amorphous silicon (a-Si:H) layers were deposited onto porous silicon (PS) formed on p-type crystalline silicon (c-Si) by anodization and used to improve the current injection of a PS-based light-emitting diode (LED). The electroluminescence (EL) spectrum for the obtained PS-based LED with n-i-p-n a-Si:H layers showed the similar tendency as that of a photoluminescence (PL) signal for an as-anodized PS. The current conduction mechanisms of this PS-based LED were also studied.
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    Appears in Collections:[電機工程研究所] 期刊論文

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