English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23048942      Online Users : 364
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29340


    Title: Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates
    Authors: Yang,MT;Chan,YJ;Shieh,JL;Chyi,JI
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:12 (UTC+8)
    Publisher: 中央大學
    Abstract: An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density, This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML382View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明