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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29343

    Title: High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)
    Authors: Laih,LH;Chen,YA;Tsay,WC;Hong,JW
    Contributors: 電機工程研究所
    Date: 1996
    Issue Date: 2010-06-29 20:22:17 (UTC+8)
    Publisher: 中央大學
    Abstract: A novel simple bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a-Si:H light absorbing layer was used to improve the responsivity of MSM-PD. Ar a bias of 10V and an He-Ne laser incident power of 10 mu W, the obtained n-a-Si:H BMSM-PD had a high responsivity of 10A/W, a low dark current density of 2.35pA/mu m(2), and a spectral response peaked at 605 nm.
    Appears in Collections:[電機工程研究所] 期刊論文

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