High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29346

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29346

Title:	High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield
Authors:	Yuang,RH;Chyi,JI;Lin,W;Tu,YK
Contributors:	電機工程研究所
Keywords:	INDIUM-TIN-OXIDE;LOW DARK CURRENT;MSM PHOTODETECTORS;SCHOTTKY CONTACTS;PHOTODIODES;PERFORMANCE;GAAS
Date:	1996
Issue Date:	2010-06-29 20:22:22 (UTC+8)
Publisher:	中央大學
Abstract:	High-performance In0.9Ga0.1 P-InP-InGaAs metal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 x 50 mu m(2) and different finger spacings of 2, 3 and 4 mu m, all exhibit high responsivities over 0.7 AW(-1) and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.
Relation:	OPTICAL AND QUANTUM ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	600	View/Open

社群 sharing