High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29346

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29346

題名:	High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield
作者:	Yuang,RH;Chyi,JI;Lin,W;Tu,YK
貢獻者:	電機工程研究所
關鍵詞:	INDIUM-TIN-OXIDE;LOW DARK CURRENT;MSM PHOTODETECTORS;SCHOTTKY CONTACTS;PHOTODIODES;PERFORMANCE;GAAS
日期:	1996
上傳時間:	2010-06-29 20:22:22 (UTC+8)
出版者:	中央大學
摘要:	High-performance In0.9Ga0.1 P-InP-InGaAs metal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 x 50 mu m(2) and different finger spacings of 2, 3 and 4 mu m, all exhibit high responsivities over 0.7 AW(-1) and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.
關聯:	OPTICAL AND QUANTUM ELECTRONICS
顯示於類別:	[電機工程研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	600	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing